Abstract:a-Si:H/SiO2 multilayers were prepared by alternatively changing plasma enhanced chemical vapour deposition of a-Si:H layers and in situ plasma oxidation process. Subsequently, as-grown samples were annealed at temperatures from 350 degrees C to 1100 degrees C in N2 ambient with an increment of 100 degrees C. The evolution of bonding configurations and structures with annealing treatments was systematically investigated by Fourier-transform infrared spectroscopy. The peak position of Si–O stretching vibration of SiO2 layers shift to 1087cm−1 after annealing at 1100 degrees C, which demonstrates that the SiO2 films fabricated by plasma oxidation after high temperature annealing can have similar properties to the thermal grown ones. A Si–O vibration from interfacial SiOx was identified: the value x was found to increase as increasing the annealing temperature, which is ascribed to the cooperation of hydrogen effusion and reordering of the oxygen bond in SiOx networks. The H-related bonds were observed in the form of H–Si–O3 and H–Si–Si3−nOn (n=1–2) configurations, which are supposed to be present in SiO2 and interfacial SiOx layers, respectively. The H atoms bonded in different bonding configurations effuse at different temperatures due to their different desorption energies.

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Visible Photoluminescence Originated from Various Mechanisms During Step by Step Annealing

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers

The Evolution Investigation Of Photoluminescence From A-Si : H/Sio2 To Nc-Si/Sio2 Multilayers

Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

Light Emission from Si Nanoclusters Formed at Low Temperatures

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

The Origin of Visible Photoluminescence from Silicon Oxide Thin Films Prepared by Dual-Plasma Chemical Vapor Deposition

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Luminescence from Si/SiO 2 with Si Implantation