Abstract:Photoluminescent silicon oxycarbide (SiO x C y ) thin films were deposited on n-type (100) silicon substrates using the organic catalytic chemical vapor deposition (O-Cat-CVD) technique employing tetra-ethyl orthosilicate (TEOS) as an organic-based precursor. These films were annealed at a temperature of 500, 800 and 1000°C for 30 minutes in a nitrogen (N 2 ) environment. The as-deposited and annealed SiO x C y films were analyzed using optical and structural characterizations, such as photoluminescence (PL), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), Secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM). The PL spectrum of the as-deposited film showed emission in the blue-green region, while the annealed SiO x C y films showed strong emission from blue to near-infrared. The PL in all the films was attributed to different structural defects related to oxygen and carbon that act as radiative centers in the SiO x C y network. The annealed films showed an increase in the emission intensity, where the annealed film at 800°C displayed the highest emission intensity. This is related to an increase in the amount of radiative defects in the films due to structural and compositional changes after the thermal annealing (TA). XPS and SIMS measurements showed an oxygen incorporation with the TA, increasing from 54.59 at. % to 63.5 at. % for the as-deposited and annealed at 1000°C films, respectively. FTIR spectra showed an increase in the Si-O-C and Si-O-Si bonds and the hydrogen and other radicals desorption. These results support the creation of radiative centers due to structural changes in the films after the thermal annealing.

High Temperature Annealing Behaviors of Luminescent SIOx : H Films

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Annealing effect on structures and luminescence of amorphous SiN films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Light Emission from Si Nanoclusters Formed at Low Temperatures

Effect of Post-Annealing in Oxygen Atmosphere on the Photoluminescence Properties of Nc-Si Rich Sio2 Films

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Effect of thermal annealing on the luminescent and structural properties of the SiO x C y thin films by organic catalytic chemical vapor deposition

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Uv and Blue Light Emission from Sic Nanoclusters in Annealed Amorphous Sic Alloys

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films