Abstract:A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH 4 ]/[SiH 4 ]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8–2.4 eV by changing the gas ratio, R . Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 10 4 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900°C and 1000°C. The formation of nanocrystalline silicon (nc-Si) dots in amorphous silicon carbide (a-SiC) host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence (EL) was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Strong room temperature photoluminescence of a-SiNx:H films

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

Structural properties of hydrogenated amorphous silicon carbide alloys

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Influence of annealing temperature on the structure and photoluminescence properties of SiC films

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Uv and Blue Light Emission from Sic Nanoclusters in Annealed Amorphous Sic Alloys

The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H