Abstract:The network disorder of the a-Si1-xCx∶H films with carbon concentration lower than 20 at.% has been studied with Raman spectroscopy and photoluminescence spectroscopy (PL).Two different laser irradiation wavelengths were employed to excite the materials,one with a wavelength of 647.1 nm and an energy close to the optical gap of the material,can penetrate fairly deep into the material,whereas the other with a wavelength of 488.0 nm and an energy higher than the optical gap,can be almost completely absorbed by the surface of the materials.The variations in penetration depth result in significant differences between Raman spectra and PL spectra.These results indicate that there exist high density defects in the layers close to the surface,and that the spatial fluctuation of the gap due to variation in bulk concentrations.The complex microstructures of the films are responsible for the marked red-shift and broadening of the frequency and width of the TO mode of the Raman spectra and a small blue-shift and broadening of the PL peak when the sample was excited with a high laser energy.These observations show that in the a-Si1-xCx∶H sample,irradiation energies may strongly affect the results of Raman spectroscopy and PL measurements because of the complexity of the microstructures of the films.

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Resonant Raman scattering of a-SiNx:H

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Annealing effect on structures and luminescence of amorphous SiN films

Microstructures and Optical Properties of SiNx Films

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiNx: H THIN FILM

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals