The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System
KJ Chen,H Qin,XF Huang,K Ikuta,A Matsuda,K Tanaka
DOI: https://doi.org/10.1016/0022-3093(96)00077-4
IF: 4.458
1996-01-01
Journal of Non-Crystalline Solids
Abstract:The effect of hydrogen species on the microstructures and the electronic properties of nanometer sized crystalline silicon (nc-Si:H) prepared in a triode plasma-enhanced chemical vapor deposition (PECVD) system with a hydrogen-diluted silane plasma were investigated. It has been found that for a given set of deposition parameters there is a threshold value of dilution ratio (H2H2 + SiH4) for the formation of nc-Si:H, which suggests that a minimum concentration of hydrogen atoms should be provided at the growing surface during the deposition processes. The electronic properties of nc-Si:H were changed when the H2 dilution ratio was greater than 94%. The dark-conductivity, σd, increased from 10−10 to 10−3 S/cm, although the photo-conductivity, σph, changed by only one order of magnitude. In addition, the drift mobility, μd, increased from 0.8 to 16 cm2/V · s. The dependence of the electronic properties on the hydrogen content and structural configurations in nc-Si:H is briefly discussed.