Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Structure Of Nc-Si : H Films

Structural Nature of Nanocrystalline Silicon

Effect Of Nitrogen And Hydrogen On The Crystallization Of Nanocrystalline Silicon Nitrogen Films

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

Study on structural properties of nanocrystalline silicon films

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

INCORPORATION EFFECT OF NITROGEN INTO Nc-Sin_x:H FILMS

New Results of Nc-Si:H Films Prepared by Hydrogen-Diluted Silane in A Triode Pecvd System

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Microstructure Characterization of Oxidized Nanocrystalline Si:H Film by Transmission Electron Microscopy

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma