Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Effect Of Nitrogen And Hydrogen On The Crystallization Of Nanocrystalline Silicon Nitrogen Films

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Structure Of Nc-Si : H Films

INCORPORATION EFFECT OF NITROGEN INTO Nc-Sin_x:H FILMS

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Structural Nature of Nanocrystalline Silicon

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Study on structural properties of nanocrystalline silicon films

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Does Hydrogen Change the Fullerenelike Structure in CNx Thin Films?

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Crystallization and Oxidation Behaviors of Cr-Si-Ni-N Resistive Films