Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Donor Formation in Nitrogen Doped Silicon

Influence of nitrogen on new donor formation in silicon crystal

Donor behavior of nitrogen impurity in nitrogen-doped CZ-Si

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Formation of Pnp Bipolar Structure by Thermal Donors in Nitrogen-Containing P-Type Czochralski Silicon Wafers

Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

Study of low temperature far infrared absorption spectrum on thermal donor and shallow thermal donor in nitrogen-doped silicon

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Formation characteristic of new donor in N-doped silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon