Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Formation characteristic of new donor in N-doped silicon

Donor Formation in Nitrogen Doped Silicon

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Influence of nitrogen on new donor formation in silicon crystal

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Donor behavior of nitrogen impurity in nitrogen-doped CZ-Si

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Formation of Pnp Bipolar Structure by Thermal Donors in Nitrogen-Containing P-Type Czochralski Silicon Wafers

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Shallow thermal donors in silicon doped with isotopic oxygen

Oxygen precipitation in N-doped silicon monocrystal

Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Electrical Characteristic of Oxygen-Related Donors in p-Type Czochralski Silicon