Abstract:In order to optimize the intrinsic gettering (IG) process based on the rapid thermal processing (RTP) for nitrogen-doped Czochralski (NCZ) silicon wafer, the effects of RTP and the following nucleation anneal on oxygen precipitation in NCZ silicon and conventional CZ silicon wafers have been comparatively investigated. It was found that, for NCZ silicon, the RTP at enough high temperature (e.g., 1250 degrees C) was necessary for generation of high density of bulk microdefects (BMDs) in the subsequent anneals despite the nitrogen enhancement effect on oxygen precipitation. With enough high concentration of vacancies introduced by the RTP at 1250 degrees C, for the conventional CZ silicon wafer, the vacancy enhancement effect on the nucleation of oxygen precipitates was most significant at 800 degrees C; while for NCZ silicon wafer, the vacancies and nitrogen atoms coacted most remarkably to nucleate the oxygen precipitates during the ramping anneal from 800 to 1000 degrees C. It was further found that the doped nitrogen is superior to the vacancy to enhance the nucleation of oxygen precipitates at temperatures of 900-1000 degrees C. Moreover, in order to maximize the density of BMDs, the RTP-based IG process for NCZ silicon wafer should be different from that for the conventional CZ silicon wafer. (c) 2005 American Institute of Physics.

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of Nitrogen on Oxygen Precipitation in Czochralski Silicon During High-Temperature Annealing

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Effect of Annealing Atmosphere on Oxygen Precipitation and Formation of Denuded Zone in Czochralski Silicon Wafer

Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer