Abstract:The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050degreesC in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050degreesC in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050degreesC anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050degreesC anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050degreesC anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Oxide Precipitate Nucleation at 300 °C in Low Resistivity N-Type Czochralski Si