Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

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Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

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Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen Precipitation in Heavily Phosphorus-Doped Silicon Wafer Annealed at High Temperatures

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Oxygen Precipitation in 1020 Cm−3 Germanium-Doped Czochralski Silicon

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Oxygen Precipitation In 10(20) Cm(-3) Germanium-Doped Czochralski Silicon