Abstract:Rapid thermal processing (RTP) induced vacancy-oxygen (VO m m ≥ 2) complexes can act as the precursors for oxide precipitate nucleation thus enhancing oxygen precipitation (OP) in Czochralski silicon (Cz-Si). In our preceding work, we have reported that 10 20 cm −3 germanium (Ge)-doping in Cz-Si facilitates the formation of VO m complexes during the high temperature RTP. Then, how the even higher Ge-doping at 10 21 cm −3 in Cz-Si affects the formation of VO m complexes during the RTP is an interesting issue to be addressed. Actually, such high Ge-doping in Cz-Si forms Cz-Si 1−x Ge x alloys. In the present work, we have investigated the formation of VO m complexes in Cz-Si 1−x Ge x (x = 0.035–0.038) wafers subjected to the high temperature RTP. The Cz-Si 1−x Ge x wafers are found to exhibit much weaker OP than Cz-Si counterparts when subjected to the same two-step (nucleation-growth) anneal following the high temperature RTP, indicating that the formation of VO m complexes during the RTP is suppressed in Cz-Si 1−x Ge x wafers. The ‘gold-marker method’ in combination with deep level spectroscopy further confirms the suppressed formation of VO m complexes in Cz-Si 1−x Ge x wafers during the RTP. Besides, the characterization of the oxygen out-diffusion depth profiles in Cz-Si 1−x Ge x and Cz-Si wafers annealed at different temperatures in the range 650–1000 °C indicates that the oxygen diffusivity in Cz-Si 1−x Ge x is a little smaller. The calculations based on density functional theory reveal that in Cz-Si 1−x Ge x the vacancies incline to locate at the first nearest neighboring sites of the Ge atoms and the capture of O i atoms by the vacancies is less energetically favorable. The aforementioned adverse conditions are believed to be responsible for the suppressed formation of VO m complexes in Cz-Si 1−x Ge x .

Oxygen Precipitation in 1020 Cm−3 Germanium-Doped Czochralski Silicon

Oxygen Precipitation In 10(20) Cm(-3) Germanium-Doped Czochralski Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Enhancement Effect of Germanium on Oxygen Precipitation in Czochralski Silicon

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Germanium Effect on Oxygen Precipitation in Czochralski Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si 1−x Ge x

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex