Abstract:Rapid thermal anneal (RTA) at high temperatures can be employed to introduce vacancies to control oxygen precipitation (OP) behavior in Czochralski (CZ) silicon. Such excessive vacancies survive from the recombination of silicon-interstitials and vacancies (V-I recombination) during the RTA. In this work, we aim to elucidate the carbon effect on the survival of vacancies in CZ silicon during the high temperature RTA by means of gold diffusion in combination with deep-level transient spectroscopy. It is revealed that the existence of ∼1017 cm−3 carbon atoms significantly increases the amount of survival vacancies in the form of vacancy-oxygen (VOm, m ≥ 2) complexes in CZ silicon when subjected to the 1250 °C/60 s RTA. Moreover, such an increase in the number of vacancies becomes more significant with the increase in the cooling rate of RTA. The density functional theory calculations suggest that the V-I recombination is to some extent unfavorable as a carbon atom is close to the silicon-interstitial. Alternatively, it is believed that the substitutional carbon (Cs) atoms tend to trap the silicon-interstitials, thus forming Ci complexes (Cs + I → Ci) in CZ silicon during the RTA. In this context, the V-I recombination is suppressed in a manner, leading to the survival of more vacancies, thus generating more VOm complexes. Furthermore, after the 1250 °C/60 s RTA, the oxide precipitate nucleation based on the VOm complexes is more significant in carbon-rich CZ (CCZ) silicon than in the conventional CZ counterpart. Hence, when subjected to the same OP anneal consisting of the nucleation anneal at 650 or 800 °C for 4 h and the subsequent growth anneal at 1000 °C for 16 h, CCZ silicon possesses a higher density of bulk microdefects and therefore stronger internal gettering capability than CZ silicon. However, the nucleation temperature for OP should be carefully selected as 650 °C for CCZ silicon in order to form an oxide precipitate-free denuded zone.

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si 1−x Ge x

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Oxygen Precipitation in 1020 Cm−3 Germanium-Doped Czochralski Silicon

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Oxygen Precipitation In 10(20) Cm(-3) Germanium-Doped Czochralski Silicon

Oxide Precipitate Nucleation at 300 °C in Low Resistivity N-Type Czochralski Si

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

Structure of Ge–O complexes in Czochralski silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Carbon Effect on the Survival of Vacancies in Czochralski Silicon During Rapid Thermal Anneal

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal