Abstract:The effect of annealing at 720–920K under enhanced pressure (up to 1.4GPa) in argon ambient on electrical properties of the surface layer of the Czochralski and Float zone grown nitrogen doped silicon (doping level 1×1014–5×1015cm−3) and Czochralski grown germanium doped silicon (doping level 7×1017cm−3) was investigated by electrical C–V, I–V and admittance methods. The decrease in electron concentration was observed in nitrogen doped Czochralski grown silicon annealed under normal pressure at 720K. The stress induced increase in electron concentration was observed in nitrogen doped Czochralski grown silicon independently on nitrogen doping level in the range 1×1014–5×1014cm−3. No dependence of electron concentration on hydrostatic pressure was observed in nitrogen doped Float zone silicon even for high doping level of 5×1015cm−3. Germanium doped silicon indicated the strongly enhanced creation of thermal donors if processed at 1.1GPa. The observed effects can be explained as a result of the oxygen–nitrogen complexes in nitrogen doped silicon and the pressure stimulated creation of thermal donors both in nitrogen and germanium doped silicon.

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Effect of annealing on photoluminescence of passivated porous silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

The behaviour of nitrogen in silicon during heat treatment at high temperature

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Direct-Nitridation of Silicon by Heat-Treating at High Temperature in Nitrogen Ambience

Heat treatment behavior of nitrogen impurity in N-doped silicon monocrystal

Effect of Nitrogen–oxygen Complex on Electrical Properties of Czochralski Silicon

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure