Abstract:Bombardment of silicon surfaces by low-energy (300–1000 eV) nitrogen ions has been investigated as a potential process for growing ultrathin films at relatively low temperatures (<500°C). The thicknesses and chemical states of the obtained films are analysed using ellipsometry, X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES). All the analyses show that ultrathin (∽ 60 Å) silicon nitride films have been directly grown on silicon substrates. Detailed studies of the influence of different process parameters on the obtained films have been carried out. The thicknesses of the obtained films appear to increase with ion energy. The nitridation is found to be a rapid process which can be divided into two steps. The thicknesses are also observed to vary slightly with substrate temperature. The average active energy of nitridation rates is about 3.5 meV which indicates nonthermal process kinetics. For AES analysis, the films are found to be nitrogen-rich ones with the stoichiometric factor x≈1.7 larger than that of pure silicon nitride (x=1.33). In both AES and XPS studies, the chemical state of the silicon atoms resembles the existence of silicon oxynitride films of low oxygen concentration. The growth mechanism is also discussed briefly.

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Direct-Nitridation of Silicon by Heat-Treating at High Temperature in Nitrogen Ambience

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Nitridation Of Silicon With Ammonia And Nitrogen

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

The behaviour of nitrogen in silicon during heat treatment at high temperature

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Thermal Warpage of Czochralski Silicon Wafers Grown under A Nitrogen Ambience

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature