Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Transmission Electron Microscopic Observation of Oxygen Precipitates in Nitrogen-Doped Silicon

Light Emission from Si Nanoclusters Formed at Low Temperatures

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Defect Annealing of Neutron-Irradiated Silicon Crystals

Slow Positron Beam Study of Nitrogen Implanted CZ-Si Subjected to Rapid Thermal Processing

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

High-temperature nitrogen annealing induced bonding states and photoluminescence changes in inductively coupled plasma torch synthesized silicon nanostructures

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

The behaviour of nitrogen in silicon during heat treatment at high temperature

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces