Abstract:Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses: 6 x 10(16), 3.6 x 10(17) and 1.2 x 10(18) cm-2. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200-degrees-C and another at about 500-degrees-C. The former is due to the annealing out of P-V and (V2-O)- complexes; the latter is due to the annealing out of (V2-O)0 complexes. For samples.irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550-degrees-C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200-degrees-C and disappears at 600-650-degrees-C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200-degrees-C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages Of V2 -type defects at 150-200-degrees-C and about 600-degrees-C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V3-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650-degrees-C, which indicates the nature of the '600-650-degrees-C acceptor'. Above 700-degrees-C, many dislocations with 231 ps less-than-or-equal-to tau less-than-or-equal-to 239 ps (sometimes both dislocations and monovacancy-type defects (240 ps less-than-or-equal-to tau less-than-or-equal-to 266 ps)), are formed, especially for samples irradiated with higher neutron doses.

Defect Annealing of Neutron-Irradiated Silicon Crystals

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

A Positron Annihilation Study of Defects in Neutron Transmutation-Doped Float-Zone (Ar)-Si

Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Irradiation Defects in Silicon Crystal

Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Defects in nitrogen-doped multicrystalline silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Characteristics of Positron Trapping at Defects in Neutron－irradiated Silicon Grown in Argon Atmosphere

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Vacancy-Type Defects in Neutron-Irradiated Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams