Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Defects in nitrogen-doped multicrystalline silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

(Invited) Defects in Cast-Mono Crystalline Silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Controllable Nitrogen Doping in Multicrystalline Silicon by Casting under Low Cost Ambient Nitrogen

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Vacancy-Type Defects in Nitrogen-Doped Silicon