Abstract:Regular dislocation networks formed as a result of the direct bonding of Cz-Si wafers with oxide remnants on the pre-bonding surfaces were investigated. Besides the dislocation network, oxide precipitates were detected at the bonding interface. The precipitate density across the network was ~5×1010 cm-2, except small irregularly distributed circular areas, several mm in diameter, where the density was remarkably lower (<5×108 cm-2). The dislocation network structure was not affected by the change in the precipitate density. Photoluminescence spectroscopy (PL) and light beam induced current (LBIC) mapping were applied for characterization of such dislocation networks. For the locations with high precipitate density, PL signal from dislocations and that from the band-to-band transitions were enhanced. On the other hand, the LBIC results indicated that oxide precipitates are active recombination centers and thus should suppress the observed radiative transitions. The controversy can be explained in the assumption that the D-band PL signal increases due to scattering of excitation light by the precipitates and due to related expansion of the excitation area of the dislocation network. The light reflection from the precipitate layer also enhances the detected band-to-band PL signal. The shape of PL spectra from the samples in the range of photon energies 0.75 – 1.15 eV was not influenced by the oxide precipitates.

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Luminescent Properties Of Nitrogen Doped Gap Semiconductor Studied With Photothermal Deflection Spectroscopy

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Regular Dislocation Networks in Si. Part II: Luminescence

Dislocation-related electroluminescence of silicon after electron irradiation

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Structural and Luminescent Properties of Electron-Irradiated Silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure