Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

Structural and Luminescent Properties of Electron-Irradiated Silicon

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Dislocation-related electroluminescence of silicon after electron irradiation

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Irradiation Defects in Silicon Crystal

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC

Silicon Based Light Emitters for On-Chip Optical Interconnects