Abstract:We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Dislocation-related electroluminescence of silicon after electron irradiation

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Structural and Luminescent Properties of Electron-Irradiated Silicon

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Light Emission from Ion‐implanted Silicon

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Research and Application of Luminescence from Defects in Silicon

Enhancement of IR Emission from a Dislocation Network in Si Due to an External Bias Voltage

Modulation of 1.5 Μm Dislocation-Related Luminescence Emitted from a Direct Silicon Bonded Interface by External Bias

Silicon Based Light Emitters for On-Chip Optical Interconnects

Towards silicon based light emitter utilising the radiation from dislocation networks

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Silicon Nanostructures for Ir Light Emitters

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon