Abstract:Regular dislocation networks formed as a result of the direct bonding of Cz-Si wafers with oxide remnants on the pre-bonding surfaces were investigated. Besides the dislocation network, oxide precipitates were detected at the bonding interface. The precipitate density across the network was ~5×1010 cm-2, except small irregularly distributed circular areas, several mm in diameter, where the density was remarkably lower (<5×108 cm-2). The dislocation network structure was not affected by the change in the precipitate density. Photoluminescence spectroscopy (PL) and light beam induced current (LBIC) mapping were applied for characterization of such dislocation networks. For the locations with high precipitate density, PL signal from dislocations and that from the band-to-band transitions were enhanced. On the other hand, the LBIC results indicated that oxide precipitates are active recombination centers and thus should suppress the observed radiative transitions. The controversy can be explained in the assumption that the D-band PL signal increases due to scattering of excitation light by the precipitates and due to related expansion of the excitation area of the dislocation network. The light reflection from the precipitate layer also enhances the detected band-to-band PL signal. The shape of PL spectra from the samples in the range of photon energies 0.75 – 1.15 eV was not influenced by the oxide precipitates.

Modulation of 1.5 Μm Dislocation-Related Luminescence Emitted from a Direct Silicon Bonded Interface by External Bias

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Enhancement of IR Emission from a Dislocation Network in Si Due to an External Bias Voltage

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Dislocation-related electroluminescence of silicon after electron irradiation

Properties of dislocation networks formed by Si wafer direct bonding

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Regular Dislocation Networks in Si. Part II: Luminescence

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Cathodoluminescence Study Of Dislocation-Related Luminescence From Small-Angle Grain Boundaries In Multicrystalline Silicon

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Silicon Based Light Emitters for On-Chip Optical Interconnects

Dislocation-Induced Light Emission

Regular Dislocation Networks in Silicon As a Tool for Novel Device Application