Abstract:Defined placement of biomolecules at Si surfaces is a precondition for a successful combination of Si electronics with biological applications. We aim to realize this by Coulomb interaction of biomolecules with dislocations in Si. The dislocations form charged lines and they will be surrounded with a space charge region being connected with an electric field. The electric stray field in a solution of biomolecules, caused by dislocations located close to the Si surface, was estimated to yield values up to few kVcm(-1).A regular dislocation network can be formed by wafer direct bonding at the interface between the bonded wafers in case of misorientation. The adjustment of misorientation allows the variation of the distance between dislocations in a range from 10 nm to a few mu m. This is appropriate for nanobiotechnology dealing with protein or DNA molecules with sizes in the nm and lower gm range. Actually, we achieved a distance between the dislocations of 10-20 nm. Also the existence of a distinct electric field formed by the dislocation network was demonstrated by the technique of the electron-beam-induced current (EBIC). Because of the relatively short range of the field, the dislocations have to be placed close to die surface. We positioned the dislocation network in an interface being 200 nm parallel to the Si surface by layer transfer techniques using hydrogen implantation and bonding. Based on EBIC and luminescence data we postulate a barrier of the dislocations at the as bonded interface < 100 meV We plan to dope the dislocations with metal atoms to increase the electric field.We demonstrated that regular periodic dislocation networks close to the Si surface formed by bonding are realistic candidates for self-organized placing of biomolecules. Experiments are underway to test whether biomolecules decorate the pattern of the dislocation lines. (c) 2005 Elsevier B.V. All rights reserved.

Regular Dislocation Networks in Silicon As a Tool for Novel Device Application

Properties of dislocation networks formed by Si wafer direct bonding

Regular Dislocation Networks in Silicon. Part I: Structure

Towards silicon based light emitter utilising the radiation from dislocation networks

Self-organized Pattern Formation of Biomolecules at Silicon Surfaces: Intended Application of a Dislocation Network

Dislocation-related electroluminescence of silicon after electron irradiation

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Regular Dislocation Networks in Si. Part II: Luminescence

Dislocations in Silicon As a Tool to Be Used in Optics, Electronics and Biology

Dislocation Engineering For A Silicon-Based Light Emitter At 1.5 Mu M

Enhancement of IR Emission from a Dislocation Network in Si Due to an External Bias Voltage

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding

Modulation of 1.5 Μm Dislocation-Related Luminescence Emitted from a Direct Silicon Bonded Interface by External Bias

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon

Dislocation-Induced Light Emission

Silicon Based Light Emitters for On-Chip Optical Interconnects

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Silicon Nanostructures for Ir Light Emitters

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon