Abstract:Defined placement of biomolecules at Si surfaces is a precondition for a successful combination of Si electronics with biological applications. We aim to realize this by Coulomb interaction of biomolecules with dislocations in Si. The dislocations form charged lines and they will be surrounded with a space charge region being connected with an electric field. The electric stray field in a solution of biomolecules, caused by dislocations located close to the Si surface, was estimated to yield values up to few kVcm(-1).A regular dislocation network can be formed by wafer direct bonding at the interface between the bonded wafers in case of misorientation. The adjustment of misorientation allows the variation of the distance between dislocations in a range from 10 nm to a few mu m. This is appropriate for nanobiotechnology dealing with protein or DNA molecules with sizes in the nm and lower gm range. Actually, we achieved a distance between the dislocations of 10-20 nm. Also the existence of a distinct electric field formed by the dislocation network was demonstrated by the technique of the electron-beam-induced current (EBIC). Because of the relatively short range of the field, the dislocations have to be placed close to die surface. We positioned the dislocation network in an interface being 200 nm parallel to the Si surface by layer transfer techniques using hydrogen implantation and bonding. Based on EBIC and luminescence data we postulate a barrier of the dislocations at the as bonded interface < 100 meV We plan to dope the dislocations with metal atoms to increase the electric field.We demonstrated that regular periodic dislocation networks close to the Si surface formed by bonding are realistic candidates for self-organized placing of biomolecules. Experiments are underway to test whether biomolecules decorate the pattern of the dislocation lines. (c) 2005 Elsevier B.V. All rights reserved.

Regular Dislocation Networks in Silicon. Part I: Structure

Properties of dislocation networks formed by Si wafer direct bonding

Regular Dislocation Networks in Silicon As a Tool for Novel Device Application

Regular Dislocation Networks in Si. Part II: Luminescence

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Self-organized Pattern Formation of Biomolecules at Silicon Surfaces: Intended Application of a Dislocation Network

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Atomic structure of dislocation kinks in silicon

Interface reconstruction and dislocation networks for a metal/alumina interface: an atomistic approach

Dislocation-Induced Light Emission

New Mechanisms of Helical Dislocation Formation Via the Pinch-off Process Near a Nano-Inhomogeneity

Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-Silicon Carbide Homoepitaxial Layers

Undissociated screw dislocations in silicon: calculations of core structure and energy

Dislocation reactions, grain boundaries, and irreversibility in two-dimensional lattices using topological tweezers

Dislocations in Silicon As a Tool to Be Used in Optics, Electronics and Biology

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Dislocations in twistronic heterostructures

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon