Abstract:The stationary motion of shuffle screw and <math>60∘</math> dislocations in silicon when the applied shear, <math>τap,</math> is much below the static Peierls stress,<math>τpmax,</math> is proved and quantified through a series of molecular dynamics (MD) simulations at 1 K and 300 K, and also by solving the continuum-level equation of motion, which uses the atomistic information as inputs. The concept of a dynamic Peierls stress, <math>τpd,</math> below which a stationary dislocation motion can never be possible, is built upon a firm atomistic foundation. In MD simulations at 1 K, the dynamic Peierls stress is found to be <math>0.33GPa</math> for a shuffle screw dislocation and <math>0.21GPa</math> for a shuffle <math>60∘</math> dislocation, versus <math>τpmax</math> of <math>1.71GPa</math> and <math>1.46GPa,</math> respectively. The critical initial velocity <math>v0c(τap)</math> above which a dislocation can maintain a stationary motion at <math>τpd<τap<τpmax</math> is found. The velocity dependence of the dissipation stress associated with the dislocation motion is then characterized and informed into the equation of motion of dislocation at the continuum level. A stationary dislocation motion below <math>τpmax</math> is attributed to: (i) the periodic lattice resistance smaller than <math>τpmax</math> almost everywhere; and (ii) the change of a dislocation's kinetic energy, which acts in a way equivalent to reducing <math>τpmax</math>. The results obtained here open up the possibilities of a dynamic intensification of plastic flow and defects accumulations, and consequently, the strain-induced phase transformations. Similar approaches can be applicable to partial dislocations, twin and phase interfaces.

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