Abstract:Motion of a single c-type screw dislocation, with [ 0 0 0 1 ] Burgers vector, in single crystal GaN is explored using classical molecular dynamics (MD) simulations with both Tersoff and Stillinger-Weber (SW) interatomic potentials. Three different dislocation core structures (full, small void, and open) along two distinct glide planes ( ( 1 1 ¯ 0 0 ) and ( 1 ¯ 1 ¯ 2 0 ) ) are studied. The system is sheared by applying opposing forces to atoms near the surface, with interior atoms maintained at a temperature of 1300 K. This results in glide for screw dislocations with a full core structure, with velocities dependent on the choice of interatomic potential. Full core dislocation glide also results in the nucleation of void defects for both potentials. Small void dislocations glide cleanly with no debris using the SW potential, but glide is not observed for the Tersoff potential. The difference between the potentials is most fully demonstrated from the response of open core dislocations in the ( 1 ¯ 1 ¯ 2 0 ) slip system. For the Tersoff potential, full core screw dislocations are nucleated from the surface of the open core dislocations, while dislocation glide loops are nucleated for the SW potential. The discrepancy in results using the different potentials is discussed, and attributed to the short cut off distance of the Tersoff potential. Finally, a dislocation dipole system is used to calculate the Peierls stress of the { 1 1 ¯ 0 0 } 〈 0 0 0 1 〉 full core screw dislocation, and compared to experimental results.

Mobility of dislocations in semiconductors

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Migration processes of the 30 degrees partial dislocation in silicon

Molecular Dynamics Study on the 60° Dislocation in Silicon

Mobility Anisotropy of Two-Dimensional Semiconductors

Atomic structure of dislocation kinks in silicon

Structural and Electronic Properties of 90° Dislocations in Silicon Nanorods: A First-Principles Calculation

Theoretical study of kinks on screw dislocation in silicon

Undissociated screw dislocations in silicon: calculations of core structure and energy

Atomic-level calculations and experimental study of dislocations in InSb

Molecular dynamics simulations of motion of edge and screw dislocations in a metal

Dislocation mobility and Peierls stress of c-type screw dislocations in GaN from molecular dynamics

Theory and Simulation of the diffusion of kinks on dislocations in bcc metals

Locking of Screw Dislocations in Silicon Due to Core Structure Transformation

Degenerate transition pathways for screw dislocations: implications for migration

Atomistic Simulations of Dislocation-Void Interactions Using Green'S Function Boundary Relaxation

Properties of dislocation networks formed by Si wafer direct bonding

Influence of Reconstruction Defects on Dislocation Motion in Si

Dislocation Dynamics in a Crystal Lattice (Peierls-Nabarro) Relief

Unravelling the jerky glide of dislocations in body-centred cubic crystals

Global transition path search for dislocation formation in Ge on Si(001)