Abstract:The elastic constants, core width and Peierls stress of 30° partial dislocation in germanium has been investigated based on the first-principles calculations and the improved Peierls–Nabarro model. Our results suggest that the predictions of lattice constant and elastic constants given by LDA are in better agreement with experiment results. While the lattice constant is overestimated at about 2.4% and most elastic constants are underestimated at about 20% by the GGA method. Furthermore, when the applied deformation is larger than 2%, the nonlinear elastic effects should be considered. And with the Lagrangian strains up to 8%, taking into account the third-order terms in the energy expansion is sufficient. Except the original γ—surface generally used before (given by the first-principles calculations directly), the effective γ—surface proposed by Kamimura et al. derived from the original one is also used to study the Peierls stress. The research results show that when the intrinsic−stacking−fault energy (ISFE) is very low relative to the unstable−stacking−fault energy (USFE), the difference between the original γ—surface and the effective γ—surface is inapparent and there is nearly no difference between the results of Peierls stresses calculated from these two kinds of γ—surfaces. As a result, the original γ—surface can be directly used to study the core width and Peierls stress when the ratio of ISFE to the USFE is small. Since the negligence of the discrete effect and the contribution of strain energy to the dislocation energy, the Peierls stress given by the classical Peierls–Nabarro model is about one order of magnitude larger than that given by the improved Peierls–Nabarro model. The result of Peierls stress estimated by the improved Peierls–Nabarro model agrees well with the 2~3 GPa reported in the book of Solid State Physics edited by F. Seitz and D. Turnbull.

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Atomic structure and energy of grain boundaries in silicon, germanium and diamond

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Atomic structure of dislocation kinks in silicon

Models of core reconstruction for the 90-degree partial dislocation in semiconductors

Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters

Dislocation mobility and Peierls stress of c-type screw dislocations in GaN from molecular dynamics

Calculation of dislocation positions and curved transition pathways in BCC crystals from atomic displacements

The Third-Order Elastic Constants and Mechanical Properties of 30° Partial Dislocation in Germanium: A Study from the First-Principles Calculations and the Improved Peierls–Nabarro Model

Theoretical study of kinks on screw dislocation in silicon

Mobility of dislocations in semiconductors

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Dislocations as natural quantum wires in Diamond

Stability of undissociated screw dislocations in zinc-blende covalent materials from first principle simulations

Stability and mobility of screw dislocations in 4H, 2H and 3C silicon carbide

Effect of edge dislocations on structural and electric properties of 4H-SiC

DFT modelling of the edge dislocation in 4H-SiC

Large scale ab-initio simulations of dislocations

Self Diffusion in Silicon Using the Ackland Potential

Dislocation content of grain boundary phase junctions and its relation to grain boundary excess properties