Abstract:For crystal materials, the grain boundary structure is complex, which is usually the place in which stress concentration and impurity accumulate. Grain boundary structure and movement have a great influence on the macroscopic properties of crystal materials, therefore, it is of great significance to study the microstructure of grain boundary. With the phase filed crystal approach, the structure of low-angle symmetric tilt grain boundary and dislocation motion at nanoscale are studied. The low-angle symmetric tilt grain boundary structure can be described by a dislocation model, in which the grain boundary can be regarded as consisting of a series of edge dislocations at a certain distance. For a relaxation process and applied stress process, the position change of dislocation motion at grain boundaries and the change of free energy density of the system are observed. Furthermore, we also analyze the influence of temperature on the grain boundary structure and the dislocation motion. In the relaxation process, the free energy of the crystal system is higher under high temperature conditions. The results show that the motion of dislocation pairs in the grains can consume the internal energy and release the distortion energy stored at the grain boundary, and thus making the system more stable and the energy reach the lowest value earlier. Simulation results show that the lower the temperature of the system, the faster the free energy density decreases, the faster the regular arrangement rate of atoms increases, the shorter the time required for the free energy density to reach a stable state becomes. And when the grain boundary reaches a steady state, the arrangement of the dislocations becomes more and more regular and arranges in a straight line. For an applied stress process, with the decrease of temperature, the time required for the first encounter of dislocation pairs and the time required for the formation of single crystal become longer, and it takes more time for the first encounter of dislocation pairs in crystals to disappear completely. Further studies also show that with the decrease of temperature, the free energy density exhibits a multi-stage ascending and descending process. The rising process of energy curve corresponds to the stage of dislocation climbing along the grain boundary, and the decline process corresponds to the stage of dislocation decomposition and encounter annihilation. At the same time, the dislocation pairs' reaction becomes more complex. Finally, the dislocations annihilate with each other.

Molecular Dynamics Study on the 60° Dislocation in Silicon

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Molecular Dynamics Simulation of Interaction Between a 60°Dislocation and Vacancy Defects in Si Crystal

DIFFUSION OF LITHIUM IN SILICON AFFECTED BY 60° MISFIT-DISLOCATION

Migration processes of the 30 degrees partial dislocation in silicon

Undissociated screw dislocations in silicon: calculations of core structure and energy

Atomic structure of dislocations in silicon, germanium and diamond

Thermal Conductivity Reduction by 60 Shuffle-Set Dislocation Arrays Embedded in Silicon Nano-Films

Stationary dislocation motion at stresses significantly below the Peierls stress: Example of shuffle screw and 60 ∘ dislocations in silicon

Mobility of dislocations in semiconductors

Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Atomic structure of dislocation kinks in silicon

Stability and mobility of screw dislocations in 4H, 2H and 3C silicon carbide

Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth

Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters

Molecular Dynamics Simulations of the Thermally and Stress-Activated Glide of a ⟨0001⟩{11̅00} Screw Dislocation in AlN

Atomistic Simulations of Dislocation Activity in Si Nanofibers in Al-Si Eutectics

Molecular dynamics study of self-diffusion in the core of a screw dislocation in face centered cubic crystals

Computer Simulation on Dislocation Intermittent Motion in the Presence of Solute Atoms