Abstract:Atomistic simulations were used to elucidate the mechanisms of localized plasticity and fracture in Si nanofibers embedded in Al matrix, with uniaxial tensile straining along the fiber axis. The Si nanofibers within the Al matrix exhibited large non-linear elastic strains followed by localized plasticity with the latter accounting for approximately 5% permanent length increase in the fibers. On the other hand, simulations with aligned Si nanofibers in vacuum (no Al matrix) exhibited elastic deformation only followed by cleavage fracture. Localized plasticity in Si nanofibers is accomplished by gliding of "zonal" partial dislocations with Burgers vector b=aSi3〈112〉 , which leads to synchronous shear of two shuffle-sets. Local stress concentration in Si nanofibers due to non-screw segments of dislocation loops around fibers triggers yielding in the nanofibers through the activation of dislocation sources at or near the interfaces but only below some critical fiber diameter, highlighting the role of nanoscale refinement in activating plasticity in embedded Si nanofibers in Al matrix. In addition, the kinetic barriers associated with the glide of edge/screw zonal dislocation in the perfect crystal and twinned crystal are computed using climbing-image nudge elastic band method. A higher mobility of the zonal dislocation in the twinned crystal suggests that twin boundaries can assist in dislocation glide parallel to the boundary. On the other hand, a nano-crack is nucleated at the interaction position of a glide partial dislocation with an intersecting growth twin boundary suggesting that intersecting twins serve to block glide and provide sites for crack nucleation.

Migration processes of the 30 degrees partial dislocation in silicon

Molecular Dynamics Study on the 60° Dislocation in Silicon

Mobility of dislocations in semiconductors

Atomic structure of dislocation kinks in silicon

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Structural and Electronic Properties of 90° Dislocations in Silicon Nanorods: A First-Principles Calculation

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Reaction Pathway Analysis for Differences in Motion Between C-core and Si-core Partial Dislocation in 3C-Sic

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Undissociated screw dislocations in silicon: calculations of core structure and energy

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

First-principles calculations on dislocations in MgO

Influence of Reconstruction Defects on Dislocation Motion in Si

Locking of Screw Dislocations in Silicon Due to Core Structure Transformation

Misorientation and Temperature Dependence of Small Angle Twist Grain Boundaries in Silicon: Atomistic Simulation of Directional Growth

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Atomistic Simulations of Dislocation Activity in Si Nanofibers in Al-Si Eutectics

DIFFUSION OF LITHIUM IN SILICON AFFECTED BY 60° MISFIT-DISLOCATION

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Theoretical insights into the Peierls plasticity in SrTiO 3 ceramics via dislocation remodelling

Stability and mobility of screw dislocations in 4H, 2H and 3C silicon carbide