Abstract:High-performance polysilicon (P-Si) is fundamental as a resource for manufacturing semiconductor devices with high photoelectric properties. However, experimentally characterizing the solidification process in detail has been difficult on account of the extremely rapid cooling rate and limited available characterization methods. Therefore, this study used molecular dynamics (MD) to investigate Si crystallization behavior through directional solidification at different cooling rates. The entire system was first analyzed in terms of energy and radial distribution function, after which the microstructural evolution was characterized by visualization. Results indicated that the cooling rate significantly affected the directional solidification of Si, and an excessively high cooling rate resulted in a decrease in the long-range order of the system. At the same cooling rate, the crystallization rates of (1 0 0), (1 1 0), and (1 1 1) crystal faces followed a descending order. The configurations of the S-L interface with different crystal faces were distinct. Specifically, while the atom numbers of defect structures that were formed in systems of (1 0 0) and (1 1 0) crystal faces were few, those formed in the (1 1 1) crystal face were more. It was difficult for the (1 0 0) crystal face to form dislocations regardless of the crystallization degree at different cooling rates, and the (1 1 0) crystal face only formed a few dislocations at high cooling rates. Dislocations formed at all cooling rates during the directional solidification of the (1 1 1) crystal face, and there was a weak correlation between the number of dislocations and cooling rates. Twinning mainly occurred during the solidification process of the (1 1 1) crystal face, and there was no obvious linear relation between its number and the cooling rate. Moreover, when high-energy dislocations occurred more often, the system stability decreased. Overall, this work will be helpful to understand the commonness and difference in directional solidification of Si with different crystal faces at different cooling rates.

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Thermally induced depolarization in a silicon (c-Si) single crystal

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Analysis of Structural Development and Defects during the Anisotropic Growth of Silicon

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Computational analysis of electronic structure and optical properties of monocrystalline silicon-vacancy defect system based on density functional theory

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Nonlinear Optical Properties of Silicon Nanocrystals Grown by a SiOx/SiO2 Superlattice Approach

Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations.

Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry

Birefringence Images of Screw Dislocations Viewed End-on in Cubic Crystals