Abstract:Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The III-VI semiconductor, monoclinic gallium monotelluride (m-GaTe), has been recently used in high-sensitivity photodetectors/phototransistors and electronic memory applications due to its anisotropic properties yielding superior optical and electrical performance. Despite these applications, the origin of such anisotropy, namely the complex structural and bonding environments in GaTe nanostructures remain to be fully understood. In the present work, we report a comprehensive atomic-scale characterization of m-GaTe by state-of-the-art element-resolved atomic-scale microscopy experiments, enabling a direct measure of the in-plane anisotropy at the sub-Angstrom level. We show that these experimental images compare well with the results of first-principles modeling. Quantum-chemical bonding analyses provide a detailed picture of the atomic neighbor interactions within the layers, revealing that vertical Ga-Ga homopolar bonds get stronger when they are distorted and rotated, inducing the strong in-plane anisotropy. Beyond GaTe, using a systematic screening over the Materials Project database, we identify four additional low-symmetric layered crystals with similar distorted tetrahedral patterns, namely, GeP, GeAs, SiP, and SiAs. We thereby confirm the homopolar-bond-induced anisotropy is a more generic feature in these layered van-der-Waals materials.

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Study on In-Plane Optical Anisotropy of Si0.75Ge0.25∕Si∕Si0.5Ge0.5 Asymmetric Superlattice by Reflectance Difference Spectroscopy

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Intrinsic Optical Anisotropy Of [001]-Grown Short-Period Inas/Gasb Superlattices

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Optical Properties of Amorphous Si/Sio2 Superlattice

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS2.

Observation of Interface Dependent Spin Polarized Photocurrents in Inas/Gasb Superlattice

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Ellipsometric Properties of GexSi1−x Superlattices

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering