Abstract:Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice structure and thermal expansion brought by heteroepitaxial growth and band engineering, and it significantly influences the thermal properties of GaN. In this work, thermal transport properties of GaN considering the effects from biaxial strain and electron-phonon coupling (EPC) are investigated using the first principles calculation and phonon Boltzmann transport equation. The thermal conductivity of free GaN is 263 and 257 W/mK for in-plane and cross-plane directions, respectively, which are consistent better with the experimental values in the literature than previous theoretical reports and show a nearly negligible anisotropy. Under the strain state, thermal conductivity changes remarkably. In detail, under +5% tensile strain state, average thermal conductivity at room temperature decreases by 63%, while it increases by 53% under the −5% compressive strain, which is mostly attributed to the changes in phonon relaxation time. Besides, the anisotropy of thermal conductivity changes under different strain values, which may result from the weakening effect from strain induced piezoelectric polarization. EPC is also calculated from the first principles method, and it is found to decrease the lattice thermal conductivity significantly. Specifically, the decrease shows significant dependence on the strain state, which is due to the relative changes between phonon-phonon and electron-phonon scattering rates. Under a compressive strain state, the decreases of lattice thermal conductivity are 19% and 23% for in-plane and cross-plane conditions, respectively, comparable with those under a free state. However, the decreases are small under the tensile strain state, because of the decreased electron-phonon scattering rates and increased phonon anharmonicity.

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Electric fields and valence band offsets at strained [111] heterojunctions

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Strain-modulated anomalous circular photogalvanic effect in p-type GaAs

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Strain Effect on the Optical Polarization Properties of C-Plane Al_026Ga_074N/GaN Superlattices

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Bending strain effects on the optical and optoelectric properties of GaN nanowires

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Influence of Biaxial Strain on Near-Band-Edge Optical Properties of C- and A-Plane Wurtzite-Inn Films

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling