Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Optical property studies of GaN films grown by MOCVD

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Strain Effect on Polarized Optical Properties of C ‐plane GaN and M ‐plane GaN

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate