Abstract:In this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on γ-LiAlO2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction ω/2θ scan together with polarized Raman spectroscopy. The epitaxial relationship between the m-plane InN and the substrate was found to be [0 0 0 1]InN ∥ [0 1 0]LAO and [1 1 − 2 0]InN ∥ [0 0 1]LAO. The inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. Atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane InN film, which originated from the replication of the surface morphological anisotropy of the substrate. Scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. A small direct band gap of ∼0.7 eV of the m-plane InN film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. Finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the Burstein–Moss effect.

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Anisotropic Characteristics of A-Plane GaN Films Grown on Γ-Lialo2 (302) Substrates by MOCVD

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Nonpolar a-plane GaN films grown on γ-LiAlO2 (302) substrates by low-pressure MOCVD

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Nonpolar A-Plane Gan Films Grown On Gamma-Lialo2 (3 0 2) Substrates By Low-Pressure Mocvd

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Properties of GaN film grown by hydride vapor phase epitaxy