Abstract:We report on the growth of high-quality semi-polar (11-22) GaN with a smooth surface on a patterned Si (113) substrate by delicately tuning the V/III ratio in a three-step approach. The 2 mu m wide stripe SiO2 is first prepared by photolithography on the Si (113), and trenches were etched in Si (113) using KOH to expose Si (1-11) sidewalls. Subsequently, an AlN layer is grown on the (1-11) surface to prevent Ga-melting back etching, finally a high-temperature GaN layer and a low-temperature GaN layer are deposited. Scanning electron microscopy showed that the sample with V/III ratio for each step is 700/1500/1500 has the most smooth surface, and atomic force microscopy also showed that the root means square of the sample was only 5.2 nm (2 mu m x 2 mu m). The orientation of the GaN are examined by high resolution x-ray diffraction. In addition, x-ray rocking curve not only proved that GaN has anisotropy, but also demonstrated the existence of strain in the samples. The room temperature Raman and photoluminescence spectra confirmed the strain in the samples and showed a very low density of basal plane stacking faults.

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

The Effects of V/III Ratio on Nonpolara-Plane GaN Films Grown Onr-Plane Sapphire by MOCVD

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Effects of Different Ⅴ/Ⅲ Ratios on the Properties of m-Plane GaN Crystal

Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a -Gan Films Grown on R -Plane Sapphire Substrates by MOCVD

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Comparative Investigation of Semipolar (11–22) GaN Grown on Patterned (113) Si with Different V/III Ratios Via MOCVD

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Study on Β-Ga2o3 Films Grown with Various VI/III Ratios by MOCVD

Nonpolar a-plane GaN films grown on γ-LiAlO2 (302) substrates by low-pressure MOCVD

Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Nonpolar A-Plane Gan Films Grown On Gamma-Lialo2 (3 0 2) Substrates By Low-Pressure Mocvd

Anisotropic Characteristics of A-Plane GaN Films Grown on Γ-Lialo2 (302) Substrates by MOCVD

Effect of AlN Interlayer on the Impurity Incorporation of GaN Film Grown on Sputtered AlN

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy