Abstract:AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the factors that influence the optical and electrical properties of the device. In this work, AlxGa1−xN (x = 0.24, 0.34, 0.47) epilayers grown on c-plane patterned sapphire substrate with GaN template by the metal organic chemical vapor deposition (MOCVD). It is demonstrated that the increase of the aluminum content leads to the deterioration of the surface morphology and crystal quality of the AlGaN epitaxial layer. The dislocation densities of AlxGa1−xN epilayers were determined from symmetric and asymmetric planes of the ω-scan rocking curve and the minimum value is 1.01 × 109 cm−2. The (101 ̄5) plane reciprocal space mapping was employed to measure the in-plane strain of the AlxGa1−xN layers grown on GaN. The surface barrier heights of the AlxGa1−xN samples derived from XPS are 1.57, 1.65, and 1.75 eV, respectively. The results of the bandgap obtained by PL spectroscopy are in good accordance with those of XRD. The Hall mobility and sheet electron concentration of the samples are successfully determined by preparing simple indium sphere electrodes.

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling