Abstract:Quaternary III-V compound InAlGaP, especially In-0.5(AlxGa1-x)(0.5)P which is lattice matched with GaAs, are important materials for visible red-green light emitting diode (LED) and laser diode (LD), solar cell and other optoelectronic and electronic device applications. A set of In-0.5(AlxGa1-x)(0.5)P thin films on GaAs substrates with a wide range of x up to similar to 80%, were grown by low pressure metalorganic chemical vapor deposition (MOCVD) and studied by a variety of nuclear science and optical analytical techniques, including Rutherford Backscattering Spectrometry (RBS), Raman scattering, photoluminescence (PL), Photoreflectance (PR) and FTIR. Temperature dependent PL-PR measurements over 10-300 K presented the band gap of these InAlGaP materials and variations with composition x and temperature (T). RBS was used to measure the microstructure of AlInGaP films, and through simulation, determine the film thickness and composition precisely. RBS measurement and simulation results indicate a quite fuzzy in the two interfaces, i.e. that there exists diffusion in the majority samples, especially between the AlInGaP layer and substrate. For a certain number of incoming He+ions, we have proposed a way to determine the error bar by RBS successful. For this series of samples, the error bar of content is around +/- 1.5%. The error bar of thickness is around +/- 5.0nm. Different InAlGaP films with different composition and thickness may present different error bars. The results illuminate that RBS is a precise tool to analysis the microstructure of quaternary semiconductor AlInGaP/GaAs samples.

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Study on Structure of AlGaN on AlN Interlayer by Synchrotron Radiation XRD and RBS

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Structural Characterization of Algan/Gan Superlattices by X-Ray Diffraction and Rutherford Backscattering

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

X-ray Diffraction Studies on AlGaN/GaN Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

The study of near-resonance Raman scattering of AlInN/AlN/GaN heterostructure