Abstract:Properties of unintentionally-doped GaN re-grown on molecular beam epitaxy grown AlN/Sapphire templates by metal organic vapor phase epitaxy (MOVPE) are studied in this article. X-ray diffraction (XRD), transmission electron microscope (TEM), and atomic force microscope are used to investigate the influence of the crystal quality and surface morphology of AlN on the GaN. It is found that when surface roughness of AlN is small, the GaN has a full width at half maximum (FWHM) values of XRD rocking curves (200—300 and 400—500 arcsec for (002) and (102) plane ω-scan, respectively) and surface roughness (0.1—0.2 nm), which are comparable to those grown on sapphire substrates by using "two-step" method, although the FWHMs of (102) plane XRD ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN.

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Growth and Characterization of Algan/Gan Superlattices

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Gan Grown on Ain/Sapphire Templates

High-Quality Ga-Rich Algan Grown on Trapezoidal Patterned Gan Template Using Super-Short Period Aln/Gan Superlattices for Rapid Coalescence

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Wafer Level Quasi-Van Der Waals Epitaxy of AlGaN/GaN Heterojunctions on Sp2-Bonded BN Controlled by AlN Nucleation Layer

Growth Condition Optimization And Mobility Enhancement Through Prolonging The Gan Nuclei Coalescence Process Of Algan/Aln/Gan Structure

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD

Characterization of Different-Al-content AlGaN/GaN Heterostructures on Sapphire

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism