Abstract:The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Enhanced Device Performance of GaN High Electron Mobility Transistors with in Situ Crystalline SiN Cap Layer

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE