Abstract:The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

The effect of AlN growth time on the electrical properties of Al 0.38Ga0.62N/AlN/GaN HEMT structures

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

High On/Off Current Ratio and High $\textit{v}_{\text{th}}$ / $\textit{r}_{\text{on}}$ Stability GaN MIS-HEMTs with GaN/AlN Superlattices Barrier

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

High On/Off Current Ratio and High <i>V</i><sub>th</sub>/<i>R</i><sub>on</sub> Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

High Performance AlGaN/GaN Hemts on GaN Substrates