Abstract:The allocated frequency bands of next-generation wireless communication networks will be shifting further up in the spectrum to be able to meet the stringent data rate requirements. Doing so, demands higher bandwidth capabilities from the electronic devices in the RF chain. Numerous cutting-edge systems are using AlGaN/GaN-HEMT based components, in particular in the transmit chain, due to their favorable combination of output power and bandwidth capability. Still, this semiconductor technology is approaching an upper bound in this regard, known as the Bode-Fano limit. Devices based on an AlScN/GaN heterointerface have been identified as candidates to push these boundaries and enable components that deliver higher power over a broader frequency range. We report on the status of MOCVD-grown AlScN/GaN HEMTs, their current capabilities but also on challenges that still hamper the exploitation of the material system's full potential. The first reported AlScN/GaN HEMTs were fabricated on epitaxial stacks grown by MBE. However, the majority of commercial GaN-based HEMT technologies is relying on MOCVD-grown epitaxy due to higher growth rate and lower cost of operation. We managed to grow AlScN/GaN heterostructures showing sheet carrier densities (n S ) of up to 3·10 13 cm -2 and mobilities of 1100 cm 2 /Vs. These results were achieved with a MOCVD reactor that had been modified to cope with the low vapor pressure of the used precursors Cp 3 Sc and (MCp) 2 ScCl. Depending on the temperature, the obtained growth rates were as high as 0.015 nm/s. Currently, further precursors with allegedly higher vapor pressure are evaluated that should allow for even higher growth rates, further improving the quality of the fabricated heterostructures. Furthermore, HEMT devices were fabricated on top of the epitaxial wafers that showed power densities (P out ) of up to 8.4 W/mm and power-added efficiencies (PAE) of more than 48 % at a frequency of 30 GHz, even surpassing the current state-of-the-art in terms of combined P out and PAE of Ga-polar devices. However, there are still a number of unsolved issues visible in most reported AlScN/GaN HEMT devices, regardless of the used growth method. One is concerning the level of leakage currents and the consequential premature soft breakdown. The root cause of this phenomena is not yet fully understood but is believed to originate from poor dielectric/isolating properties of the Sc-containing barrier. This hypothesis is supported by a comparably high level of impurites that is found in the AlScN layers. Minimizing theses residuals by purification of the precursors is, therefore, necessary to further improve the electrical device characteristics. Secondly, transport properties of AlScN/GaN heterointerfaces are not as well studied as more established junctions, e.g., AlGaN/GaN and AlN/GaN. An important parameter that has not been experimentally identified for 2DEGs induced by AlScN/GaN heterojunctions yet, is the saturation drift velocity (v sat ). It is of particular importance since the Bode-Fano limit, among other, depends on it. Since the extension of the latter is one of the great promises of AlScN/GaN devices, it is clear that the value of v sat is essential to know in order to make quantitative predictions of the level of improvement that is achievable in terms of bandwidth capability but also with regard to power density. We will give an overview of recent advances of MOCVD-grown AlScN/GaN HEMTs with respect to their capability to extend on the achievable performance level of present GaN-based devices, in particular in the millimeter-wave frequency range. Further, we will benchmark the results against other competing technologies, i.e. GaAs pHEMT and Si-CMOS, to give an outlook of where optimized AlScN/GaN devices can takes us and where they cannot.

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

RF Performance Augmentation Using DG-InAlN/GaN HEMT

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

(Invited) Recent Advances and Challenges of MOCVD-Grown AlScN/GaN HEMTs

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates