Abstract:GaN-based heterostructures and their electrical properties play a crucial role in micro- and nanoelectronic device applications. In this work, the size-dependent electrical properties of wurtzite AlN/GaN heterostructured nanofilms are investigated by using the first-principles simulations. The electronic structures of 1.4 nm/1.4 nm, 1.8 nm/1.8 nm, 2.2 nm/2.2 nm, 2.6 nm/2.6 nm AlN/GaN heterostructured nanofilms are systemically analyzed. The simulations demonstrated that the surface and interface enable to affect the electron density of states of AlN/ GaN nanofilms, and the potential well at the valence band of the AlN intermediate layer increases with increasing nanofilm thickness. The electrical conductivity of AlN/GaN nanofilms increases significantly with increasing the thickness from 2.8 nm to 4.4 nm, and the conductivity values stabilize from 4.4 nm to 5.2 nm. Therefore, it can be concluded that the size dependence of the conductivity becomes weaker with increasing the nanofilm thickness. The results of this work could be useful for realizing the tuning of electrical properties of AlN/GaN heterostructured nanofilms through the size effects and surface/interface engineering.

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effects of Channel Thickness on Structure and Transport Properties of AlGaN/InGaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates