Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition
Siqi Li,Pengfei Shao,Xiao Liang,Songlin Chen,Zhenhua Li,Xujun Su,Tao,Zili Xie,Bin Liu,M. Ajmal Khan,Li Wang,T. T. Lin,Hideki Hirayama,Rong Zhang,Ke Wang
DOI: https://doi.org/10.1088/1674-1056/ad84cc
2024-01-01
Chinese Physics B
Abstract:Abstract We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of (AlN)m/(GaN)n superlattices (SLs), where m and n represent the numbers of monolayers. Clear satellite peaks observed in XRD 2θ-ω scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces. For (AlN)m/(GaN)n SLs with an average Al composition of 50%, we have obtained an electron density up to 4.48×1019 cm-3 and a resistivity of 0.002 Ω·cm, and a hole density of 1.83×1018 cm-3 with a resistivity of 3.722 Ω·cm, both at room temperature. Furthermore, the (AlN)m/(GaN)n SLs exhibit a blue shift for their photoluminescence peaks, from 403 nm to 318 nm as GaN reduced from n=11 to n=4 MLs, reaching the challenging UVB wavelength range. The results demonstrate that the (AlN)m/(GaN)n SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN, making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.