Abstract:Al(subscript x)Ga(subscript 1-x)N material has a direct band gap between 3.42 eV and 6.2 eV at room temperature, the corresponding cut-off wavelength flexible from 365 nm to 200 nm. It also covers the spectrum obtained with conventional gas and solid-state ultraviolet (UV) lasers, therefore it is necessary for UV photo-detector and deep-ultraviolet light emitting diodes (deep UV-LED). For the fabrication of these devices, thick Al(subscript x)Ga(subscript 1-x)N layer with high Al composition and high crystalline quality are essential. A major obstacle concerning the growth of such Al(subscript x)Ga(subscript 1-x)N layer is the large mismatches in the lattice constants and thermal expansion coefficients between the Al(subscript x)Ga(subscript 1-x)N and the commonly used substrate of sapphire. Crack start to be generated because of tensile strain at a thickness of less than 100 nm for Al0.25Ga0.75N once it directly grown on GaN/Sapphire. The production of crack-free thick Al(subscript x)Ga(subscript 1-x)N ternary layer with high Al composition has also been a challenging issue. It has been reported that low temperature MN (LT-A1N) IL, or high temperature MN (HTA1N) IL, or AlN/ Al(subscript x)Ga(subscript 1-x)N SLs IL is introduced to improve the quality of Al(subscript x)Ga(subscript 1-x)N layer. Introduction of GaN/ Al(subscript x)Ga(subscript 1-x)N superlattices (SLa) interlayer (IL) is an effective technique for releasing stress in Al(subscript x)Ga(subscript 1-x)N and decreasing TDs density in Al(subscript x)Ga(subscript 1-x)N epitaxial film. The influence of GaN/Al(subscript x)Ga(subscript 1-x)N superlattice (SLs) interlayer (IL) on the strain and threading dislocations (TDs) density of Al(subscript x)Ga(subscript 1-x)N epitaxial film grown on GaN/sapphire were investigated. Probing of phonon frequency by Raman scattering is one of the most convenient methods for charactering residual stress. The strain in Al(subscript x)Ga(subscript 1-x)N epitaxial film is obtained via Raman spectroseopy. Edge TDs density and screw TDs density of Al(subscript x)Ga(subscript 1-x)N film are obtained by X-Ray Diffraction (XRD). As thickness of superlattices period increase (well and barrier have the same thickness), both the edge TDs and the screw TDs density of Al(subscript x)Ga(subscript 1-x)N film decrease, and minimum tensile strain of Al(subscript x)Ga(subscript 1-x)N, film is obtained for the sample with ten periods 5 nm/5 nm GaN/Al0.3 Ga0.7 N SLs IL. When the well thickness of GaN/Al0.3Ga0.7 N superlattices is keeped and the barrier thickness of superlattices is increased to 8 nm, namely using ten periods 5 nm/8 nm GaN/Al0.3Ga0.7 N SLs IL, compressive strain in Al(subscript x)Ga(subscript 1-x)N epitaxial film is achieved. Minimum TDs density of Al(subscript x)Ga(subscript 1-x)N film is obtained for the sample with ten periods 8nm/8nm GaN/Al0.3Ga0.7N SLs IL. The TDs density indicates that SLs IL can not only restrain edge TDs but also restrain screw TDs partly. Transmission electron microscopy (TEM) measurement demonstrates that the SLs IL can bend or end the TDs or make TDs incorporate, which can lead to TDs density reduction in Al(subscript x)Ga(subscript 1-x)N epitaxial film. And the inclination of edge TDs induced by relaxation strain in Al(subscript x)Ga(subscript 1-x)N film was observed, which resulted in a compressive strain relaxation of Al(subscript x)Ga(subscript 1-x)N layer. The strain relaxation of compressively strained Al(subscript x)Ga(subscript 1-x)N by inclined threading dislocation is calculated using TEM results. Above all, the Al(subscript x)Ga(subscript 1-x)N epitaxial film with compressive strain and low TDs density is obtained by the technique of GaN/ Al(subscript x)Ga(subscript 1-x)N SLs IL. It is a foundation for the growth of Al(subscript x)Ga(subscript 1-x)N epitaxial film with high crystalline quality and high Al composition.

The Influence of GaN/AlxGa1-xN Superlattice(SLs) Interlayer(IL) on the Strain and Threading Dislocations(TDs) Density of AlxGa1-xN Grown on GaN/Sapphire

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Influence of Aln Thickness on Strain Evolution of Gan Layer Grown on High-Temperature Aln Interlayer

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Structural and Optical Properties of Al 1-X in X N Epilayers on GaN Template Grown by Metalorganic Chemical Vapor Deposition