Abstract:Properties of unintentionally-doped GaN re-grown on molecular beam epitaxy grown AlN/Sapphire templates by metal organic vapor phase epitaxy (MOVPE) are studied in this article. X-ray diffraction (XRD), transmission electron microscope (TEM), and atomic force microscope are used to investigate the influence of the crystal quality and surface morphology of AlN on the GaN. It is found that when surface roughness of AlN is small, the GaN has a full width at half maximum (FWHM) values of XRD rocking curves (200—300 and 400—500 arcsec for (002) and (102) plane ω-scan, respectively) and surface roughness (0.1—0.2 nm), which are comparable to those grown on sapphire substrates by using "two-step" method, although the FWHMs of (102) plane XRD ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN.

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Depth-Dependent Tetragonal Distortion Study of Algan Epilayer Thin Film Using Rbs and Channeling Technique

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Elastic strain in InGaN and AlGaN layers

Characterization for Microstructure of GaN on Si Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Gan Grown on Ain/Sapphire Templates