Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Crystallographically Tilted and Partially Strain Relaxed GaN Grown on Inclined {111} Facets Etched on Si(100) Substrate

Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Depth-Dependent Tetragonal Distortion Study of Algan Epilayer Thin Film Using Rbs and Channeling Technique

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate