Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Depth-Dependent Tetragonal Distortion Study of Algan Epilayer Thin Film Using Rbs and Channeling Technique

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Elastic strain in InGaN and AlGaN layers

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Determination of Tetragonal Distortion of Al0.69In0.09Ga0.22N/GaN Heterostructure by RBS/C and HRXRD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)