Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Shude Yao,Mingfang Wu,Shouyuan Chen,Shengquan Sun,Yong Zhang
1999-01-01
Abstract:GaN, AlGaN and InGaN crystalline films were formed by metallorganic vapour phase epitaxy method. The structures of these films were studied by Rutherford backscattering spectrometry and channeling. We got many properties of the films, such as their chemical component, thickness, dopant density versus depth, the crystalline quality, the orientation of the crystallographic axis. Some alloy films XmiN value (Al0.15Ga0.85N's Xmin value is as low as 1.17%) and half angle width (half-width of GaN is 0.74°) were measured. We also got the property of the buffer layer of the films and the influence of different substrates on the growth of the films. It shows that GaN and its ternary alloy with high crystalline quality can be heteroepitaxially grown on the Al2O3 substrate.
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