Abstract:GaN thin film with AlN nucleation layer was grown on Si(lll) substrates using metal-organic chemical vapor deposition(MOCVD).High resolution X-ray diffraction(XRD),ellipsometer and atomic force microscope(AFM) are used to investigate the effect of AlN thickness on GaN film.The results demonstrate that the thickness of low temperature AlN nucleation layer prominently influences the morphology of AlN nucleation layers,the crystal quality and stress of GaN epilayers.It is found that the surface roughness of AlN samples is larger with thicker AlN nucleation layer.θ—2θscan of(0002) shows that the compressive strAlN exists on all GaN samples in c-axis direction and reduces slightly with the increasing of AlN thickness,w scan shows that FWHM of(0002) increases while FWHM of(10-12) decreases with the increasing of AlN thickness.FWHM of(10-12) is related with the density of edge-type threading dislocation(ETD).It means that ETD reduces with the AlN thickness increasing.The change in dislocation density is attributed to the different grAlN sizes and grAlN densities on AlN nucleation layers. The crystal quality of GaN epilayer deposited on AlN nucleation layer with large grAlN size and low grAlN density is good,since the lateral growth and coalescence of GaN islands are promoted.On the other hand,the AlN nucleation layer with small grAlN size and high grAlN density leads to formation of dislocations. These dislocations degrade the crystal quality of GaN.

Strain in Alingan Thin Films Caused by Different Contents of Al and in Studied by Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Chemical Composition and Elastic Strain in AlInGaN Quaternary Films

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Chemical Composition Dependent Elastic Strain in Algan Epilayers

Microstructure Study on Heterostructures of Alingan/Gan/Al2o3 by Using Rutherford Backscattering/Channelling and Xrd

Determination of Al Composition in Strained AlGaN Layers

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Elastic strain in InGaN and AlGaN layers

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)